Modeling of Advanced Device Structures Personnel
نویسنده
چکیده
As MOSFET dimensions are reduced to the sub-100 nm level, the electrical performance is critically dependent on the two-dimensional topology and concentrations of dopants in the semiconductor. In order to characterize, predict, and control the device topology, and hence the device behavior, it is essential to have a method of obtaining an accurate description of the 2-D profile. Moreover, knowledge of various aspects of the 2-D distribution and its effects enables one to engineer doping configurations that optimize the device performance.
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تاریخ انتشار 2000